DEFINITION:

Covers the component technologies most commonly evaluated using the processes included in 1-D-6.

(Source: ESA TD 23A)

SUBDOMAINS:

1. Passive Components: Capacitors, inductors, resistors, crystals, magnetics, switches, wires, cables, connectors, piezo actuators, heaters, harnesses, non integrated electro-mechanical components. RF passive components such as isolators, circulators, etc. are also addressed.

2. Silicon-Based Components: Discrete, analogue, digital and mixed signal technologies and device types across all integration levels and functional complexity ranges in bipolar and MOS technologies.

3. RF Microwave and Millimetre Wave Components: Discrete and MMIC components including RF-CMOS, GaAs, SiGe, InP technologies, packaging and RF passive components.

4. Optoelectronic Active and Passive Components: Optical and near-optical sensors, detectors, laser diodes, fibre optical connectors, optical assemblies and associated passive components.

5. Hybrids and Micro-packaging: Thick and thin film hybrid technologies, microwave hybrid circuits, DC–DC converter technologies, crystal oscillators, multichip modules, system-on-a-chip (SOC), 3D stacking and interconnect technologies, IC packaging technologies, RF and MMIC packaging and subassemblies.

6. Power Components: Very-high-voltage MOSFETS, IGBT, SiC, GaN power devices, power including for realisation of high-performance DC–DC power conversion transistors and thermal management components.

7. Wide Band Gap Technologies: SiC, GaN and Diamond for advanced MMIC applications and harsh environment sensor technologies and for realisation of high performance DC–DC power conversion transistors.

8. Micro Electro Mechanical Systems (MEMS): Evolving range of technologies and applications including RF MEMS, pressure sensors, AOCS sensors, MOEMS, actuators, etc.

9. Nanotechnology in Microcircuits: Application of carbon nanotubes, nano-fibres, innovative nanomaterials to microcircuit improvement.